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BeRex - HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

Numéro de référence BCF060T
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
Fabricant BeRex 
Logo BeRex 





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BCF060T fiche technique
BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either
wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for
increased reliability.
Product Features
25.0 dBm Typical Output Power
12.5 dB Typical Power Gain @ 12 GHz
Low Phase Noise
0.3 X 600 Micron Recessed Gate
Applications
Commercial
Military / Hi-Rel
Test & Measurement
DC CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
Idss Saturated Drain Current (Vgs = 0V, Vds = 2V)
Gm Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V)
BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open)
BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MINIMUM
100
70
-3.5
TYPICAL
170
100
-2.0
-15
-10
75
MAXIMUM UNIT
240 mA
mS
V
-11 V
-7 V
° C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3

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