PDF BCF020T Data sheet ( Hoja de datos )

Número de pieza	BCF020T
Descripción	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
Fabricantes	BeRex
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No Preview Available ! BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either wideband or narrow-band applications. The BCF020T is produced using state of the art metallization and each wafer is screened to insure compliance with specifications. These chips utilize SI3N4 passivation for increased reliability. Product Features • 20 dBm Typical Output Power • 13.5 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.3 X 200 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel • Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V) BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open) BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open) Rth Thermal Resistance (Au-Sn Eutectic Attach) MINIMUM 40 25 -3.5 TYPICAL 60 35 -2.0 -15 -10 160 MAXIMUM MINIMUM 80 mA mS -0.5 V -11 V -7 V ° C/W www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.3 January 2015 1 page Wire Bonding Options BCF020T ㆍ Gold Bonding Wire information 1. Gate to input transmission line - Length and Height : 400 um and 250 um - Number of wires: 1 2. Drain to output transmission line - Length and Height : 350 um and 250 um - Number of wires: 1 3. Source to ground plate - Length and Height : 200 um x 250 um - Number of wires: 4 Note: The diameter of bonding wires: 1 mil DIE ATTACH RECOMMENDATIONS: BeRex recommends the “Eutectic” die attach using Au-Sn (80%-20%) pre-forms. The die attach station must have accurate temperature control, and the operation should be performed with parts no hotter than 300°C for less than 10 seconds. An inert forming gas (90% N2-10% H2) or clean, dry N2 should be used. HANDLING PRECAUTIONS: GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD precautions must be taken whenever you are handling these devices. It is critically important that all work surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to prevent ESD damage. STORAGE & SHIPPING: BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a sealed antistatic and moisture barrier bag. This packaging is designed to provide a reasonable measure of protection from both mechanical and ESD damage perform die assembly in a work area with a class 10,000 or better clean room environment to prevent contamination of the exposed devices. www.berex.com BeRex, Inc. 3350 Scot Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595 Specifications are subject to change without notice. ©BeRex 2015 Rev. 1.3 January 2015 5 Page

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Número de pieza	Descripción	Fabricantes
BCF020T	HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP	BeRex

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