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IPB35N10S3L-26 fiches techniques PDF

Infineon - MOSFET ( Transistor )

Numéro de référence IPB35N10S3L-26
Description MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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IPB35N10S3L-26 fiche technique
OptiMOS-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB35N10S3L-26
Product Summary
V DS
R DS(on),max
ID
100 V
26.3 mW
35 A
PG-TO263-3-2
Type
IPB35N10S3L-26
Package
PG-TO263-3-2
Marking
3N10L26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=17A
Avalanche current, single pulse
I AS -
Gate source voltage2)
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
35
25
140
175
35
±20
71
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2011-05-17

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