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Número de pieza | IPB025N10N3G | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB025N10N3G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Extremely low on-resistance R DS(on)
• High current capability
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
IPB025N10N3 G
IPB025N10N3 G
Product Summary
V DS
R DS(on),max
ID
100 V
2.5 mΩ
180 A
Package
Marking
PG-TO263-7
025N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
180
167
720
1000
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.03
page 1
2009-12-11
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
10 V
6V
250
7.5 V
200
5.5 V
5V
150
100
4.5 V
50
0
01
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
250
200
150
100
50
0
0
Rev. 2.03
175 °C
25 °C
24
V GS [V]
IPB025N10N3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
5
4.5 V
4
5V
3
6V
7.5 V
2 10 V
1
0
2 0 40 80 120 160 200 240 280
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
240
200
160
120
80
40
0
60
page 5
40 80 120
I D [A]
160
2009-12-11
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB025N10N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB025N10N3G | MOSFET ( Transistor ) | Infineon |
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