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BD8222EFV fiches techniques PDF

ROHM Semiconductor - Power Driver

Numéro de référence BD8222EFV
Description Power Driver
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BD8222EFV fiche technique
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Structure
Product Series
type
Feature
Silicon Monolithic Integrated Circuit
Power Driver for Compact disc player
4CH BTL Driver.
Employs the HTSSOP-B24PIN power package for compaction.
Has a wide dynamic range. PowVcc1=8V, RL=86.0 (typ.)
The thermal shutdown circuit contained.
Switches CH2 input by Control input terminal(CNT).
Incorporates mute function by CNT terminal and mute terminal.
Absolute maximum ratings(Ta=25 )
Parameter
Symbol
Limits
Unit
Power supply voltage
PowVcc 1,PowVcc 2
15
Input terminal
BIAS1, BIAS2, LDIN,
SLIN, IN1, IN3, IN4
PowVcc 2
CNT terminal
CNT
PowVcc 2
MUTE terminal
MUTE1,2, 3 4
PowVcc 2
BIASSW terminal
BIASSW
PowVcc 2
Power dissipation
Pd
1.1*1
4.0*2
Operating temperature range
Topr -40 +85
Storage temperature
Tstg -55 +150
Junction temperature
Tjmax
+150
*1 70mm×70mm×1.6mm, occupied copper foil is less than 3%,one layer substrate(back copper foil 0mm×0mm)
Reduce power by 8.8mW for each degree above 25 .
*2 70mm×70mm×1.6mm, occupied copper foil is less than 3%,four layer substrate(back copper foil 70mm×70mm)
Reduce power by 32.0mW for each degree above 25 .
Operating conditions
(Set the power supply voltage taking allowable dissipation into considering.)
PowVcc 1,2
4.5 10
Please use it with PowVcc 1= PowVcc 2
Status of this document
TheJapaneseversionofthisdocumentistheformalspecification.Acustomermay usethistranslationversiononlyforareferencetohelpreadingtheformalversion.
Ifthereareanydifferencesintranslationversionofthis document,formalversiontakes priority.
Becarefultohandlebecausethecontentofthedescriptionofthismaterialmightcorrespondtothelabor(technologyinthedesign,manufacturing,and use)inforeigncountryexchange
andForeignTrade ControlLaw.
Aradiationis notdesigned.
REV. A

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