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Numéro de référence | IPT65R195G7 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
IPT65R195G7
MOSFET
650VCoolMOSªC7Goldseries(G7)PowerTransistor
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible
SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~1nH).
•TOLLpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectiongroovedleadsandisqualifiedforindustrialapplications
accordingtoJEDEC(J-STD20andJESD22).
•TOLLSMDpackagecombinedwithleadfreedieattachprocessenables
improvedthermalperformanceRth.
Benefits
•C7GoldFOMRDS(on)*Qgis14%betterthanpreviousC7650Venabling
fasterswitchingleadingtohigherefficiency.
•C7Goldcanreach33mΩininTOLL115mm2footprint,whereasprevious
BICC7650Vwas45mΩin150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•TOLLpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
700
195
V
mΩ
Qg.typ
20
ID,pulse
41
ID,continuous @ Tj<150°C 18
Eoss@400V
2.3
nC
A
A
µJ
Body diode di/dt
60
A/µs
Type/OrderingCode
IPT65R195G7
Package
PG-HSOF-8
Marking
65C7195G
HSOF
12345 678
Tab
Drain
Tab
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.1,2016-03-14
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Pages | Pages 14 | ||
Télécharger | [ IPT65R195G7 ] |
No | Description détaillée | Fabricant |
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