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Datasheet IPT65R033G7-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IPT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IPT004N03L | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,30V IPT004N03L
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•Optimizedfore-fuseandORingapplication •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avala  Infineon mosfet | | |
| 2 | IPT007N06N | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V IPT007N06N
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
1Description
Features
•100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC Infineon mosfet | | |
| 3 | IPT012N08N5 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-Transistor,80V IPT012N08N5
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
1Description
Features
•Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FO Infineon mosfet | | |
| 4 | IPT015N10N5 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM5Power-Transistor,100V IPT015N10N5
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
1Description
Features
•Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(F Infineon mosfet | | |
| 5 | IPT020N10N3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM3Power-Transistor,100V IPT020N10N3
DataSheet
Rev.2.0 Final
PowerManagement&Multimarket
1Description
Features
•N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Extremelylowon-re Infineon mosfet | | |
| 6 | IPT059N15N3 | MOSFET, Transistor MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª3Power-Transistor,150V IPT059N15N3
DataSheet
Rev.2.1 Final
PowerManagement&Multimarket
OptiMOSª3Power-Transistor,150V IPT059N15N3
1Description
Features
•N-channel,normallevel •Excellentgatecharge Infineon mosfet | | |
| 7 | IPT111N20NFD | MOSFET, Transistor IPT111N20NFD
MOSFET
OptiMOSª3Power-Transistor,200V
Features
•N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Qualified Infineon mosfet | |
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