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PDF IPT007N06N Data sheet ( Hoja de datos )
| Número de pieza | IPT007N06N | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
IPT007N06N
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
1 page  
OptiMOSTMPower-Transistor,60V
IPT007N06N
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
60
2.1
-
-
-
-
-
-
160
Values
Typ. Max.
--
2.8 3.3
0.5 1
10 100
10 100
0.66 0.75
0.85 1
1.8 2.7
320 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=280µA
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=150A
VGS=6V,ID=75A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Unit
Typ. Max.
16000 21280 pF
3400 4522 pF
229 458 pF
38 -
ns
18 -
ns
76 -
ns
22 -
ns
Note/TestCondition
VGS=0V,VDS=30V,f=1MHz
VGS=0V,VDS=30V,f=1MHz
VGS=0V,VDS=30V,f=1MHz
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8Ω
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8Ω
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8Ω
VDD=30V,VGS=10V,ID=100A,
RG,ext=1.8Ω
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
Values
Typ. Max.
67 -
47 -
39 -
58 -
216 287
4.2 -
192 255
227 -
Unit Note/TestCondition
nC VDD=30V,ID=100A,VGS=0to10V
nC VDD=30V,ID=100A,VGS=0to10V
nC VDD=30V,ID=100A,VGS=0to10V
nC VDD=30V,ID=100A,VGS=0to10V
nC VDD=30V,ID=100A,VGS=0to10V
V VDD=30V,ID=100A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
- VDD=30V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.1,2014-02-20
5 Page 
6PackageOutlines
OptiMOSTMPower-Transistor,60V
IPT007N06N
1) partially covered with Mold Flash
MILLIMETERS
DIM
MIN MAX
A 2.20 2.40
b 0.70 0.90
b1 9.70 9.90
b2 0.42 0.50
c 0.40 0.60
D
10.28
10.58
D2 3.30
E 9.70 10.10
E1 7.50
E4 8.50
E5 9.46
e 1.20 (BSC)
H
11.48
11.88
H1 6.55 6.75
H2 7.15
H3 3.59
H4 3.26
N8
K1 4.18
L 1.60 2.10
L1 0.70
L2 0.60
L4 1.00 1.30
INCHES
MIN MAX
0.087
0.094
0.028
0.035
0.382
0.390
0.017
0.020
0.016
0.024
0.405
0.416
0.130
0.382
0.398
0.295
0.335
0.372
0.047 (BSC)
0.452
0.468
0.258
0.266
0.281
0.141
0.128
8
0.165
0.063
0.083
0.028
0.024
0.039
0.051
Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches
Final Data Sheet
11
DOCUMENT NO.
Z8B00169619
SCALE 0
2
02
4mm
EUROPEAN PROJECTION
ISSUE DATE
20-02-2014
REVISION
02
Rev.2.1,2014-02-20
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IPT007N06N.PDF ] | |
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