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PDF CJD02N60 Data sheet ( Hoja de datos )
| Número de pieza | CJD02N60 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ZPSEMI | |
| Logotipo |  |
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CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description
The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition , this advanced
MOSFET is designed to withstand high energy in avalanche and
commutation modes . The new energy efficient design also offers a
drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power suppliers,
converters and PWM motor controls , these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional and safety margin
against unexpected voltage transients.
TO-251-3L
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z IDSS and VDS(on) Specified at Elevated Temperature
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±20
Continuous Drain Current
ID 2
Pulsed Drain Current
IDM 8
Single Pulsed Avalanche Energy*
EAS 128
Power Dissipation
PD 1.25
Thermal Resistance from Junction to Ambient
RθJA
100
Junction Temperature
TJ 150
Storage Temperature
Tstg -50 ~+150
*EAS condition: Tj=25℃,VDD=50V,L=64mH,IAS=2A,RG=25Ω, Starting TJ = 25°C
Unit
V
A
mJ
W
℃/W
℃
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| PDF Descargar | [ Datasheet CJD02N60.PDF ] | |
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