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Datasheet CJD01N80-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
CJD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJD01N60 | N-Channel Power MOSFET, Transistor CJD01N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to  ZPSEMI mosfet | | |
| 2 | CJD01N65B | N-Channel Power MOSFET, Transistor CJD01N65B
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N65B N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. D ZPSEMI mosfet | | |
| 3 | CJD01N80 | N-Channel Power MOSFET, Transistor CJD01N80
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N80 N-Channel Power MOSFET
GENERAL DESCRIPTION The CJD01N80 is an N-channel mode power MOSFET using
advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior sw ZPSEMI mosfet | | |
| 4 | CJD02N60 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
4.4Ω@10V
ID
2A
TO-251S
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking c  JCET mosfet | | |
| 5 | CJD02N60 | N-Channel Power MOSFET, Transistor CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to ZPSEMI mosfet | | |
| 6 | CJD02N65 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N65
V(BR)DSS
650
N-Channel Power MOSFET
RDS(on)MAX
4.4Ω@10V
ID
2A
TO-251S
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch e JCET mosfet | | |
| 7 | CJD02N65 | N-Channel Power MOSFET, Transistor CJD02N65
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N65 N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. De ZPSEMI mosfet | |
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