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PDF CJAC35N03 Data sheet ( Hoja de datos )
| Número de pieza | CJAC35N03 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%5×6-8L Plastic-Encapsulate MOSFETS
CJAC35N03
V(BR)DSS
30 V
N-Channel Power MOSFET
RDS(on)MAX
ID
7mΩ@10V
12mΩ@4.5V
35A
PDFN:%5×6-8L
DESCRIPTION
The CJAC35N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and
current
Good stability and uniformity with high EAS
APPLICATIONS
Excellent package for good heat dissipation
Special process technology for high ESD
capability
High side switch in POL DC/DC converter
MARKING
CJAC35N03 = Part No.
Solid dot=Pin1 indicator
XXX=Date Code
Secondary side synchronous rectifier
EQUIVALENT CIRCUIT
D DDD
8 7 65
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
1 234
S S SG
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
ID(1)
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(2)
Power Dissipation
Thermal Resistance from Junction to Ambient
PD
RθJA(1)
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
(2).EAS condition: VDD=15V,L=0.1mH, RG=25Ω, Starting TJ = 25°C
Limit
30
±20
35
120
150
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-6,Oct,2016
1 page  
ZZZFMHOHFFRP
5
A-6,Oct,2016
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJAC35N03.PDF ] | |
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