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PDF CJAC50P03 Data sheet ( Hoja de datos )
| Número de pieza | CJAC50P03 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%5×6-8L Plastic-Encapsulate MOSFETS
CJAC50P03 P-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
PDFN:%5×6-8L
-30V
7mΩ@-10 V
-50A
DESCRIPTION
The CJAC50P03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and
current
Good stability and uniformity with high EAS
APPLICATIONS
Excellent package for good heat dissipation
Special process technology for high ESD
capability
Battery and loading switching
MARKING
CJAC50P03 = Part No.
EQUIVALENT CIRCUIT
D DDD
8765
Solid dot=Pin1 indicator
XXX=Date Code
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
12 3 4
S SSG
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
ID(1)
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(2)
Power Dissipation
Thermal Resistance from Junction to Ambient
PD
RθJA(1)
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
(2).EAS condition: VDD=15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Limit
-30
±20
-50
-70
300
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-5,Mar,2016
1 page  
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5
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJAC50P03.PDF ] | |
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