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PDF CJAC10H02 Data sheet ( Hoja de datos )
| Número de pieza | CJAC10H02 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5×6-8L Plastic-Encapsulate MOSFETS
CJAC10H0
V(BR)DSS
20 V
N-Channel Power MOSFET
RDS(on)MAX
ID
2.0mΩ@4.5V
2.4mΩ@2.5V
100A
PDFNWB5×6-8L
DESCRIPTION
The CJAC10H02 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
High density cell design for ultra low RDS(ON)
Fully characterized avalanche voltage and
Excellent package for good heat dissipation
Special process technology for high ESD
current
Good stability and uniformity with high EAS
APPLICATIONS
capability
SMPS and general purpose applications
Hard switched and high frequency circuits
Power switching application
Uninterruptible power supply
MARKING
D '''
CJAC
10H02
XXX
6 S6*
CJAC10H02 = Part No.
Solid dot=Pin1 indicator
XXX=Code
EQUIVALENT CIRCUIT
D DDD
8 7 65
1 234
S S SG
MAXIMUM RATINGS ( Ta=25ć unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
().0RXQWHG RQ D JODVV HSR[\ ERDUG RI PP [ PP [ PPW
www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
20
±12
10
40
240
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-1,Jul,2016
1 page  
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5
A-1,Jul,2016
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJAC10H02.PDF ] | |
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