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Datasheet CJ8820-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
CJ8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJ818B | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23-6L Plastic-Encapsulate Transistors
CJ818B TRANSISTOR (PNP)
DESCRIPTIONS The device is manfactured in low voltage PNP Planar Technology with “Base Island ” layout. The resulting Transistor shows exceptional high gain performance coupled wi  JCST transistor | | |
| 2 | CJ8810 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8810 N-Channel MOSFET
V(BR)DSS
20V
RDS(on)MAX
26mΩ @10V 27mΩ @4.5V 30 mΩ@3.8V 33mΩ @2.5V 45mΩ @1.8V
FEATURE z Surface Mount Package z Low R DS(on) z ESD Protected Gate
MARKING
ID SOT-23
7A
 JCET mosfet | | |
| 3 | CJ8820 | N-Channel Enhancement Mode Field Effect Transistor CJ8820
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820 N-Channel Enhancement Mode Field Effect Transistor
DESCRIPTION The CJ8820 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional lo  ZPSEMI transistor | | |
| 4 | CJ8820 | Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ8820
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
21mΩ@10V 24mΩ@4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V
ID
7A
DESCRIPTION
The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low JCET mosfet | |
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