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PDF IGW50N60TP Data sheet ( Hoja de datos )
| Número de pieza | IGW50N60TP | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IGBT
TRENCHSTOPTMPerformancetechnology
IGW50N60TP
600VIGBTTRENCHSTOPTMPerformanceseries
Datasheet
IndustrialPowerControl
1 page  
IGW50N60TP
TRENCHSTOPTMPerformanceSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=175°C
IC=0.80mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=50.0A
min.
Value
typ.
max. Unit
600 -
-V
- 1.60 1.80 V
- 1.94 -
4.1 5.1 5.7 V
- - 40 µA
---
- - 100 nA
- 78.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Cies
Coes
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=50.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
Value
Unit
min. typ. max.
- 1950 -
- 83 - pF
- 67 -
- 249.0 - nC
- 13.0 - nH
- 255 - A
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=7.0Ω,RG(off)=7.0Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKW50N60DTP) reverse
recovery.
min.
Value
typ.
max. Unit
- 20 - ns
- 30 - ns
- 215 - ns
- 18 - ns
- 1.53 - mJ
- 0.85 - mJ
- 2.38 - mJ
5 Rev.2.1,2016-02-05
5 Page 
IGW50N60TP
TRENCHSTOPTMPerformanceSeries
500
450
1000
Cies
Coes
Cres
400
350
300
250
200
100
150
100
50
10
0 10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0
12 13 14 15 16 17 18 19 20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=150°C)
16
14
0.1 D=0.5
12
0.2
0.1
10 0.05
0.02
8 0.01 0.01
single pulse
6
4 0.001
2
0
10 11 12 13 14 15
VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
i: 1 2 3 4 5 6
ri[K/W]: 0.01216198 0.0542188 0.06849304 0.1687298 0.01315813 1.2E-3
τi[s]: 3.3E-5
2.0E-4
2.3E-3
0.01219856 0.09700046 1.874087
1E-4
1E-6
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. TypicalIGBTtransientthermalimpedance
(D=tp/T)
11 Rev.2.1,2016-02-05
11 Page | ||
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| PDF Descargar | [ Datasheet IGW50N60TP.PDF ] | |
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