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Datasheet IGB30N60H3-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


IGB Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IGB01N120H2IGBT, Insulated Gate Bipolar Transistor

IGB01N120H2 HighSpeed 2-Technology • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability -
Infineon Technologies
Infineon Technologies
igbt
2IGB03N120H2HighSpeed 2-Technology

IGP03N120H2, IGW03N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel
Infineon Technologies
Infineon Technologies
data
3IGB10N60TIGBT, Insulated Gate Bipolar Transistor

IGB10N60T TRENCHSTOP™ Series p Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and va
Infineon
Infineon
igbt
4IGB15N60TIGBT, Insulated Gate Bipolar Transistor

IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and
Infineon Technologies
Infineon Technologies
igbt
5IGB20N60H3IGBT, Insulated Gate Bipolar Transistor

IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGB20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGB20N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology  Features: TRENCHSTOPTMtechnologyof
Infineon
Infineon
igbt
6IGB30N60H3IGBT, Insulated Gate Bipolar Transistor

IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGB30N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IGB30N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology  Features: TRENCHSTOPTMtechnologyof
Infineon
Infineon
igbt
7IGB30N60TIGBT, Insulated Gate Bipolar Transistor

IGB30N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and va
Infineon
Infineon
igbt



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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