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NJW0281G Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه NJW0281G
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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NJW0281G شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
NJW0281G
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min)
·Good Linearity of hFE
·Complement to Type NJW0302G
APPLICATIONS
·Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
250 V
VCEO
Collector-Emitter Voltage
250 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
15
A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
1.5 A
150 W
150
Tstg Storage Temperature Range -65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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