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IPSA70R600CE fiches techniques PDF

Infineon - MOSFET ( Transistor )

Numéro de référence IPSA70R600CE
Description MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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IPSA70R600CE fiche technique
IPSA70R600CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
•Standoffisolationbetweenleads
Applications
Adapter,LCD&PDPTVandIndoorlighting
IPAK-shortleadwithISO-Standoff
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg.typ
ID
ID,pulse
Eoss@400V
750
600
22
10.5
18
2
V
m
nC
A
A
µJ
Type/OrderingCode
IPSA70R600CE
Package
PG-TO 251
Marking
70S600CE
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-09-07

PagesPages 14
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