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PDF IPP12CN10LG Data sheet ( Hoja de datos )
| Número de pieza | IPP12CN10LG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
IPS12CN10L G
IPP12CN10L G
100 V
12 mW
69 A
Package
PG-TO220-3
PG-TO251-3-11
Marking
12CN10L
12CN10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=69 A, R GS=25 W
Reverse diode dv /dt
dv /dt
I D=69 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.03
page 1
Value
69
49
276
150
6
±20
125
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2011-09-05
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
250
10 V 7.5 V
5V
200
4.5 V
150
100 4 V
50
3.5 V
0
0
3.2 V
3V
123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
150
4
100
50
0
0
Rev. 1.03
175 °C
25 °C
24
VGS [V]
IPS12CN10L G
IPP12CN10L G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
25
3.2 V
20
3.5 V
15
10
4V
4.5 V
10 V
5
0
5 0 20 40 60 80 100
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
140
120
100
80
60
40
20
0
6 0 20 40 60 80 100 120 140
ID [A]
page 5
2011-09-05
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IPP12CN10LG.PDF ] | |
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