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IPN70R1K0CE fiches techniques PDF

Infineon - MOSFET ( Transistor )

Numéro de référence IPN70R1K0CE
Description MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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IPN70R1K0CE fiche technique
IPN70R1K0CE
MOSFET
700VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss@400V
Body diode di/dt
750
1
15.2
12.7
1.5
500
V
nC
A
µJ
A/µs
Type/OrderingCode
IPN70R1K0CE
Package
PG-SOT223
Marking
70S1K0
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-10-10

PagesPages 13
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