|
|
Número de pieza | IPB107N20NA | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB107N20NA (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! IPB107N20NA IPP110N20NA
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20NA
IPP110N20NA
200 V
10.7 mW
88 A
Package
Marking
PG-TO263-3
107N20NA
PG-TO220-3
110N20NA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current1)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Value
88
63
352
560
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.1
page 1
2011-05-11
1 page IPB107N20NA IPP110N20NA
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
10 V
175
7V
150
125 5 V
100
75
4.5 V
50
25
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
200
180
160
140
120
100
80
60
40
175 °C
25 °C
20
0
024
VGS [V]
4
6
Rev. 2.1
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
4.5 V
15
5V
7V
10 10 V
5
0
5 0 20 40 60 80 100 120 140
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
180
160
140
120
100
80
60
40
20
0
8 0 25 50 75 100 125 150
ID [A]
page 5
2011-05-11
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPB107N20NA.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB107N20N3G | Power-Transistor | Infineon Technologies |
IPB107N20NA | Power-Transistor | Infineon |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |