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IPC50N04S5L-5R5 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPC50N04S5L-5R5
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPC50N04S5L-5R5 fiche technique
IPC50N04S5L-5R5
OptiMOS-5 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
40 V
5.5 mW
50 A
PG-TDSON-8-33
1
1
Type
IPC50N04S5L-5R5
Package
Marking
PG-TDSON-8-33 5N04L5R5
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=25A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
50
42
200
30
50
±16
42
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2016-09-07

PagesPages 9
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