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IPD60N10S4L-12 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD60N10S4L-12
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD60N10S4L-12 fiche technique
OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD60N10S4L-12
Product Summary
V DS
R DS(on),max
ID
100 V
12 mW
60 A
PG-TO252-3-313
TAB
1
3
Type
IPD60N10S4L-12
Package
Marking
PG-TO252-3-313 4N10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=30A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
60
43
240
120
40
+/-16
94
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2011-11-30

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