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PDF BD6975FV Data sheet ( Hoja de datos )

Número de pieza BD6975FV
Descripción Multifunction Single-phase Full-wave Fan Motor Driver
Fabricantes ROHM Semiconductor 
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Datasheet
DC Brushless Fan Motor Drivers
Multifunction Single-phase Full-wave
Fan Motor Driver
BD6975FV
General description
BD6975FV is a 1chip driver that composes H-bridge of
power DMOS FET. Moreover, it corresponds to the large
current motor, compared with old drivers, because the
regenerative method of motor current and the driving
block are optimized.
Package
SSOP-B14
W (Typ.) x D (Typ.) x H (Max.)
5.00mm x 6.40mm x 1.35mm
Features
„ SSOP small package
„ Driver including power DMOS FET
„ Speed controllable by DC / direct PWM input
„ Hi-Eff switching
„ Quick start
„ Current limit
„ Lock protection and automatic restart
„ Rotation speed pulse signal (FG) output
SSOP-B14
Application
„ Fan motors for general consumer equipment of desktop PC, and Projector, etc.
Absolute maximum ratings
Parameter
Symbol
Limit
Supply voltage
Power dissipation
Vcc 20
Pd 874.7 *1
Operating temperature range
Topr –40 to +100
Storage temperature range
Tstg –55 to +150
Output voltage
Output current
Vo 20
Io 1.2 *2
Rotation speed pulse signal (FG) output voltage
Vfg
20
Rotation speed pulse signal (FG) output current
Ifg
10
Reference voltage (REF) output current
Hall bias (HB) output current 1
Hall bias (HB) output current 2
Iref
Ihb1
Ihb2
5
12 *3
5 *4
Input voltage (H+, H–, TH, MIN, CS, LZST)
Vin
7
Junction temperature
Tj 150
*1 Reduce by 7.0mW/°C over Ta=25°C. (On 70.0mm×70.0mm×1.6mm glass epoxy board)
*2 This value is not to exceed Pd.
*3 The condition of Ta=0°C or more and Vcc=9V or more
*4 The condition of less than Ta=0°C and less than Vcc=9V
Unit
V
mW
°C
°C
V
A
V
mA
mA
mA
mA
V
°C
Recommended operating conditions
Parameter
Operating supply voltage range
Operating input voltage range 1 (H+, H–)
(more than Vcc=9V)
Operating input voltage range 1 (H+, H–)
(less than Vcc=9V)
Operating input voltage range 2
(TH, MIN, CS, LZST)
Symbol
Vcc
Vin1
Vin2
Limit
3.5 to 17.0
0 to 7
0 to Vcc–2
0 to Vref
Unit
V
V
V
V
Product structureSilicon monolithic integrated circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product is not designed protection against radioactive rays
1/13
TSZ02201-0H1H0B100220-1-2
28.JUL.2012 Rev.002

1 page




BD6975FV pdf
BD6975FV
Typical performance curves(Reference data)
Datasheet
1.0 1.0
0.8 0.8
0.6
100°C
0.6
0.4
25°C
0.4
–40°C
0.2 0.2
3.5V
12V
17V
0.0
0.0
0.3 0.6 0.9
Output sink current: Io[A]
Fig.7 Output low voltage (Vcc=12V)
1.2
0.0
0.0
0.3 0.6 0.9
Output sink current: Io[A]
Fig.8 Output low voltage (Ta=25°C)
1.2
0.7
0.6
0.5
0.4
0.3
0.2
0
7.0
–40°C
25°C
100°C
6.0
5.0
4.0
–40°C
25°C
100°C
Operating range
5 10 15
Supply voltage: Vcc[V]
Fig.9 Lock detection ON time
3.0
Operating range
2.0
20 0
5 10 15
Supply voltage: Vcc[V]
20
Fig.10 Lock detection OFF time
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
5/13
TSZ02201-0H1H0B100220-1-2
28.JUL.2012 Rev.002

5 Page





BD6975FV arduino
BD6975FV
Datasheet
Power dissipation
Power dissipation (total loss) indicates the power that can be consumed by IC at Ta=25°C (normal temperature). IC is
heated when it consumes power, and the temperature of IC chip becomes higher than ambient temperature. The
temperature that can be accepted by IC chip depends on circuit configuration, manufacturing process, etc, and consumable
power is limited. Power dissipation is determined by the temperature allowed in IC chip (maximum junction temperature)
and thermal resistance of package (heat dissipation capability). The maximum junction temperature is in general equal to
the maximum value in the storage temperature range.
Heat generated by consumed power of IC is radiated from the mold resin or lead frame of package. The parameter which
indicates this heat dissipation capability (hardness of heat release) is called heat resistance, represented by the symbol
θja[°C/W]. This heat resistance can estimate the temperature of IC inside the package. Fig.28 shows the model of heat
resistance of the package. Heat resistance θja, ambient temperature Ta, junction temperature Tj, and power consumption P
can be calculated by the equation below:
θja = (Tj – Ta) / P [°C/W]
Thermal de-rating curve indicates power that can be consumed by IC with reference to ambient temperature. Power that
can be consumed by IC begins to attenuate at certain ambient temperature. This gradient is determined by thermal
resistance θja. Thermal resistance θja depends on chip size, power consumption, package ambient temperature, packaging
condition, wind velocity, etc., even when the same package is used. Thermal de-rating curve indicates a reference value
measured at a specified condition. Fig.29 shows a thermal de-rating curve (Value when mounting FR4 glass epoxy board
70[mm] x 70[mm] x 1.6[mm] (copper foil area below 3[%])). Thermal resistance θjc from IC chip joint part to the package
surface part of mounting the above-mentioned same substrate is shown in the following as a reference value.
θjc = 40 [°C/W] (reference value)
Pd[mW]
θja = (Tj – Ta) / P [°C/W]
θjc = (Tj – Tc) / P [°C/W]
Ambient temperature Ta[°C]
Package surface temperature Tc[°C]
874.7
750
500
θja=142.9 [°C/W]
250
Chip surface temperature Tj[°C]
Power consumption P[W]
Fig.28 Thermal resistance
Ta[° C]
0 25 50 75 100 125 150
Reduce by 7.0mW/°C over 25°C
(On 70.0mm x 70.0mm x 1.6mm glass epoxy board)
Fig.29 Thermal de-rating curve
I/O equivalence circuit(Resistance values are typical)
1) Power supply terminal,
2) Hall input terminals,
3) Regenerative period setting
and Ground terminal
Output duty controllable input
terminal
terminal,
Minimum output duty setting
terminal,
and Output current detection
terminal
4) Motor output terminals,
and Output current
detecting resistor
connecting terminal
Vcc
Vcc
GND
H+
H–
TH
MIN
CS
1k
LZST
1k
21k
OUT1
OUT2
RNF
5) Reference voltage output
terminal,
and Hall bias terminal
Vcc
6) Speed pulse signal output
terminal
59k
60k
REF
HB
FG
10
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
11/13
TSZ02201-0H1H0B100220-1-2
28.JUL.2012 Rev.002

11 Page







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