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Número de pieza | BD63005AMUV | |
Descripción | Three-Phase Brushless Motor Driver | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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Three-Phase Brushless Motor Driver
BD63005AMUV
General Description
BD63005AMUV is a Three-Phase Brushless Motor
Driver with a 33V power supply voltage rating and a 2A
(3.5A peak) output current rating. It generates a driving
signal from the Hall sensor and drives PWM through the
input control signal. In addition, the power supply can
use 12V or 24V and it has various controls and built-in
protection functions, making it useful for variety of
purposes. Since the IC adopts small packages, it can be
used on small diameter motors.
Features
Built-in 120° Commutation Logic Circuit
Low ON Resistance DMOS Output
PWM Control Mode (low side arm switching)
Built-in Power-saving Circuit
CW/CCW Function
Short Brake Function
FG Output (1FG/3FG conversion)
Built-in Protection Circuit for Current Limiting (CL),
Overheating (TSD), Over Current (OCP), Under
Voltage (UVLO), Over Voltage (OVLO), Motor Lock
(MLP)
Key Specifications
Power supply voltage rating
33V
Output current rating (Continuous):
Output current rating (Peak):
2.0A
3.5(Note1)A
Operating temperature range:
-25 to +85°C
Stand-by current:
1.7mA(Max)
Current limit detect voltage:
0.2V±10%
Output ON Resistance (top & bottom total):
0.17Ω(Typ)
UVLO lockout voltage:
6.0V(Typ)
(Note1) Pulse width tw≤1ms, duty=20% pulse
Package
VQFN040V6060
W(Typ) x D(Typ) x H(Max)
6.00mm x 6.00mm x 1.00mm
Applications
OA machines
Other consumer products
Typical Application Circuit(s)
0.1µF
VREG 14
HU 0.01µF
HV 0.01µF
HW 0.01µF
HUP 15
HUN 16
HVP 17
HVN 18
HWP 19
HWN 20
FGSW 35
PWMB
31
CW 32
BRKB
30
ENB 34
24 VG
CP2
23
22 CP1
0.1µF
25 27
26 28
38 39 U
VCC
0.1µF
VCC
0.1µF
47µF
78 V
11 12 W
53
24
RNF
RNF
1 RCL
M
3~
0.15Ω
10kΩ
33 FGO
CLNMT
36
LPE
29
21 10
GND PGND
Figure 1. Application Circuit
〇Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0P1P0B01360-1-2
20.MAY.2016 Rev.001
1 page BD63005AMUV
Thermal Resistance(Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
1s(Note 3)
2s2p(Note 4)
Unit
VQFN024V4040
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA 101.4
ΨJT 5
23.7 °C/W
3 °C/W
(Note 1)Based on JESD51-2A(Still-Air)
(Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3)Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Material
Board Size
Single
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Footprints and Traces
Thickness
70μm
(Note 4)Using a PCB board based on JESD51-7.
Layer Number of
Measurement Board
Material
4 Layers
FR-4
Top
Copper Pattern
Footprints and Traces
Thickness
70μm
Board Size
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
Copper Pattern
74.2mm x 74.2mm
Thickness
35μm
Bottom
Copper Pattern
74.2mm x 74.2mm
Thickness
70μm
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
5/20
TSZ02201-0P1P0B0001360-1-2
20.MAY.2016 Rev.001
5 Page BD63005AMUV
Electrical Characteristics (Unless otherwise specified Ta=25°C, VCC=24V)
Limit
Item Symbol
Min Typ Max
Unit
[Whole]
Circuit Current
ICC - 4.4 8.4 mA
Stand-by Current
ISTBY - 1.1 1.7 mA
VREG Voltage
VREG 4.5 5.0 5.5 V
[Driver output]
Output On Resistance
[Hall input]
RON - 0.17 0.27 Ω
Input Bias Current
IHALL
-2.0
-0.1
+2.0
µA
Range of In-phase Input Voltage1
Range of In-phase Input Voltage2
VHALLCM1
VHALLCM2
0
0
-
VREG-1.7
V
-
VREG
V
Minimum Input Voltage
HYS Level +
HYS Level -
[Input of Control:ENB]
VHALLMIN
50
-
- mVp-p
VHALLHY+
5
15 25 mV
VHALLHY-
-25
-15
-5 mV
Input Current
IENB -75 -45 -25 µA
Standby Voltage
VSTBY
2.0
-
VREG
V
Enable Voltage
VENA
[Input of Control:PWMB, CW, BRKB, FGSW]
0
- 0.8 V
Input Current
IIN -80 -50 -30 µA
Voltage Input H
VINH
2.0
-
VREG
V
Voltage Input L
Minimum Input Pulse Width
[Input of Control:LPE, CLNMT]
VINL
tPLSMIN
0
1
- 0.8 V
- - msec
Input Current
Input Voltage "H"
Input Voltage "M"
Input Voltage "L"
[FG Output:FGO]
IIN2 -80 -50 -30 µA
VINH2 0.8×VREG
-
VREG
V
VINM2 0.4×VREG - 0.6×VREG V
VINL2
0
- 0.2×VREG V
Output Voltage L
VFGOL
0
0.1 0.3 V
[Current Limit]
Detect Voltage
VCL
0.18 0.20 0.22
V
[UVLO]
Release Voltage
Lockout Voltage
VUVH 6.5 7.0 7.5 V
VUVL 5.5 6.0 6.5 V
[OVLO]
Release Voltage1
VOVL1
14.0
15.0
16.0
V
Lockout Voltage1
VOVH1
15.0
16.0
17.0
V
Release Voltage2
Lockout Voltage2
VOVL2
VOVH2
29.0
29.5
30.5
31.0
32.0
32.5
V
V
Condition
VENB=0V
ENB=OPEN
IVREG=-10mA
IOUT=±1.5A(Upper + Lower)
VHALL=0V
When one hall Input is bias
VENB=0V
VIN=0V
CW, BRKB
VIN2=0V
IFGO=2mA
LPE="M"
LPE="M"
LPE="H" or "L"
LPE="H" or "L"
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
11/20
TSZ02201-0P1P0B0001360-1-2
20.MAY.2016 Rev.001
11 Page |
Páginas | Total 24 Páginas | |
PDF Descargar | [ Datasheet BD63005AMUV.PDF ] |
Número de pieza | Descripción | Fabricantes |
BD63005AMUV | Three-Phase Brushless Motor Driver | ROHM Semiconductor |
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