|
|
Numéro de référence | WGP15G65 | ||
Description | Silicon N-Channel MOSFET | ||
Fabricant | Winsemi | ||
Logo | |||
WGP15G65 Product Description
Absolute Maximum Ratings
symbol
Parameter
VGE Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C
IC
Collector Current (continuous) at TC = 100°C
ICM(1)
Collector Current (pulsed)
Eas Single Pulse Energy TC= 25°C
PTOT
Total Dissipation at TC = 25°C
ESD ESD (Human Body Model)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(1)Pulse width limited by safe operating area
Thermal Characteristics
Symbol
RQJ C
RQJ A
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
40
30
15
45
500
150
3
- 55 to 150
Unit
V
A
A
A
mJ
W
KV
℃
Value
Min Typ
--
--
Max
0.75
62.5
Unit
℃/W
℃/W
Electrical Characteristics (TCASE= 25 °C UNLESS OTHERWISE SPECIFIED)
Symbol
Parameter
Test Conditions
BV(CES)
BV(ECR)
ICES
IGES
VGE(th)
VCE(SAT)
Clamped Voltage
Emitter Collector Break-down Voltage
Collector cut-off Current (VGE =0)
Gate-Emitter Leakage Current (VCE =0)
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
IC=1mA,VGE =0,TC=25°C
IC = 75 mA, TC= 25°C
VCE=620V, VGE=0 ,TC=25°C
VGE =±10V,VCE = 0
VCE =VGE, IC = 250μA, TC=- 50°C
VCE =VGE, IC = 250μA, TC= 25°C
VCE =VGE, IC = 250μA, TC=150°C
VGE =5.5V, IC = 5 A, TC= 25°C
VGE =5.5V, IC = 5A, TC= 150°C
VGE =5.5V, IC = 10 A, TC= 25°C
VGE =5.5V, IC = 10 A, TC= 150°C
Min
650
20
-
-
2
1.8
1.5
-
-
-
-
Typ
-
30
5
±100
3.18
3.05
2.11
1.03
0.92
1.5
1.32
Max
-
-
-
-
4
3.5
3
1.2
1.2
1.7
1.5
Unit
V
V
uA
uA
V
V
V
V
V
V
V
Symbol
gfs (1)
Cies
Coes
Cres
Qg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Test Conditions
VCE =25V , IC=10 A
VCE=25V, f= 1MHz, VGE =0
VCE = 280V, IC =10 A, VGE=5V
Min.
25
-
-
-
-
Typ.
30
1196
211
3.3
21.4
Max.
-
-
-
-
-
Unit
S
pF
pF
pF
nC
Symbol
Parameter
Test Conditions
Min.
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@W insemi Microelectronics Co., Ltd., All right reserved.
WINSEMI MICROELECTRONICS
Typ. Max. Unit
WT-G003-Rev.A0 Nov.2013
WINSEMI MICROELECTRONICS
1113
|
|||
Pages | Pages 6 | ||
Télécharger | [ WGP15G65 ] |
No | Description détaillée | Fabricant |
WGP15G65 | Silicon N-Channel MOSFET | Winsemi |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |