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PDF IHW30N135R3 Data sheet ( Hoja de datos )
| Número de pieza | IHW30N135R3 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N135R3
Datasheet
IndustrialPowerControl
1 page  
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.75mA,VCE=VGE
VCE=1350V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
IHW30N135R3
min.
Value
typ.
max. Unit
1350 -
-V
-
-
1.65 1.85
1.90 -
V
- 2.00 -
-
-
1.65 1.85
1.80 -
V
- 1.90 -
5.1 5.8 6.4 V
- - 100.0 µA
- - 2500.0
- - 100 nA
- 25.6 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=1080V,IC=30.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 2066 -
- 67 - pF
- 58 -
- 263.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Turn-off energy, soft switching
Eoff
Tvj=25°C,
VCC=600V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=220nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
dv/dt=150.0V/µs
Value
min. typ. max. Unit
- 337 - ns
- 47 - ns
- 1.93 - mJ
- 0.41 - mJ
5 Rev.2.2,2015-01-26
5 Page 
ResonantSwitchingSeries
IHW30N135R3
16
270V
1080V
14
1E+4
Cies
Coes
Cres
12
1000
10
8
6
100
4
2
0
0 50 100 150 200 250 300
QGE,GATECHARGE[nC]
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge
(IC=30A)
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
D=0.5
D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
single pulse
0.01 0.01
0.001
1E-6
i: 1 2
34
56
ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072
9.7E-3
1.7E-3
τi[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 19. IGBTtransientthermalresistance
(D=tp/T)
0.001
1E-6
i: 1 2
34
56
ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072
9.7E-3
1.7E-3
τi[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11 Rev.2.2,2015-01-26
11 Page | ||
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| PDF Descargar | [ Datasheet IHW30N135R3.PDF ] | |
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