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Numéro de référence | IPAW60R380CE | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Infineon | ||
Logo | |||
1 Page
IPAW60R380CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
•Widedistanceof4.25mmbetweentheleads
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
PG-TO220FullPAKWideCreepage
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
380
mΩ
ID. 15 A
Qg.typ
32
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPAW60R380CE
Package
PG - TO220 FullPAK
WideCreepage
Marking
60S380CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31
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Pages | Pages 14 | ||
Télécharger | [ IPAW60R380CE ] |
No | Description détaillée | Fabricant |
IPAW60R380CE | MOSFET ( Transistor ) | Infineon |
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