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IPA65R400CE fiches techniques PDF

Infineon - MOSFET ( Transistor )

Numéro de référence IPA65R400CE
Description MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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IPA65R400CE fiche technique
IPA65R400CE
MOSFET
650VCoolMOS™CEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe
experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.
TheresultingdevicesprovideallbenefitsofafastswitchingSuperjunction
MOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingand
conductionlossesmakeswitchingapplicationsevenmoreefficient,more
compact,lighterandcooler.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•JEDECqualfied,Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
400
m
ID. 15.1 A
Qg.typ
39
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPA65R400CE
Package
PG-TO 220 FullPAK
Marking
65S400CE
TO-220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-02-24

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