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CE3512K2 fiches techniques PDF

CEL - 12 GHz Super Low Noise FET

Numéro de référence CE3512K2
Description 12 GHz Super Low Noise FET
Fabricant CEL 
Logo CEL 





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CE3512K2 fiche technique
RF Low Noise FET
CE3512K2
12 GHz SupEenrteLroawShNorot iDsoecuFmEeTnti/nTitHleoNllaomwe HPelarestic PKG
DESCRIPTION
Super Low Noise and High Gain
Hollow (Air Cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.30 dB TYP., Ga = 13.7 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 12 GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3512K2
CE3512K2-C1
Package
Micro-X plastic
package
Marking
C5
Description
Embossed tape 8 mm wide
Pin 4 (Gate) faces the
perforation side of the tape
MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0018-05 (Issue A)
1

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