PDF NLAS3899B Data sheet ( Hoja de datos )

Número de pieza	NLAS3899B
Descripción	Dual DPDT Low Capacitance Switch
Fabricantes	ON Semiconductor
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No Preview Available ! NLAS3899B Dual DPDT Low RON, Low Capacitance Switch The NLAS3899B is a dual DPDT analog switch designed for low power audio and dual SIM card applications. The low RON of 3.0 W (typical) is ideal for routing audio signals to or from a moderately high impedance load. In addition, the low CON of 20 pF (typical) gives the NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card applications. Features • Single Supply Operation 1.65 to 4.3 V VCC Function Directly from Li−Ion Battery • Low ON Resistance (3.0 W Typical Across VCC) • Low CON (20 pF Typical) • Bandwidth 280 MHz • Maximum Breakdown Voltage: 5.5 V • Low Static Power • Interfaces with 1.8 V Chipset • These are Pb−Free Devices Typical Applications • Cell Phone Speaker/Microphone Switching • Ringtone−Chip/Amplifier Switching • Dual SIM Card Data Switching • Four Unbalanced (Single−Ended) Switches Important Information • ESD Protection: Human Body Model (HBM) 1000 V − All Pins Human Body Model (HBM) 5000 V − I/O to GND • Continuous Current Rating Through each Switch ±300 mA • Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 • Package: ♦ 1.8 x 2.6 x 0.75 mm WQFN16 Pb−Free ♦ 3.0 x 3.0 x 0.9 mm QFN16 Pb−Free http://onsemi.com MARKING DIAGRAMS ÇÇÇÇ16 1 AAMG 1 WQFN16 CASE 488AP G ÇÇÇÇÇÇ16 1 QFN16 1 CASE 485AE NLAS 3899 ALYW XX = Specific Device Code A = Assembly Location M = Date Code/Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) COMA NOA Vcc NCD 16 15 14 13 NCA 1 A−B IN 2 NOB 3 COMB 4 12 COMD 11 NOD 10 C−D IN 9 NCC 5678 NCB GND NOCCOMC © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. 1 Publication Order Number: NLAS3899B/D 1 page AC ELECTRICAL CHARACTERISTICS NLAS3899B TIMING/FREQUENCY (Typical: T = 25°C; VCC = 3.0 V, RL = 50 W, CL = 35 pF, f = 1 MHz) Symbol tON tOFF tBBM BW Pins IN to NCx or NOx IN to NCx or NOx IN to NCx or NOx Parameter Turn On Time Turn Off Time Break Before Make −3dB Bandwidth Test Conditions CL = 5 pF VCC (V) 2.3 − 4.3 2.3 − 4.53 3.0 1.65 − 4.3 −405C to +855C Min Typ Max 30 40 Unit ns 20 30 ns 2 15 ns 280 MHz ISOLATION AND THD (Typical: T = 25°C; VCC = 3.0 V, RL = 50 W, CL = 5 pF, f = 1 MHz) Symbol Q THD VONL OIRR Xtalk Pins NOx COMx to COMy Parameter Test Conditions Charge Injection VIN = VCC to GND RIS = 0 W, CL = 1.0 nF Q = CL − ΔVOUT Total Harmonic Dis- tortion FIS = 20 Hz to 20 kHz RL = Rgen = 600 W, CL = 1.0 pF VIS = 1.0 VPP Maximum Feed- through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC & GND Off Isolation VIN = 0 VNO or VNC (pk−pk) = 1.0 V Non−Adjacent Chan- VNO or VNC (pk−pk) = 1.0 V nel VCC (V) 1.65 − 4.3 3.0 1.65 − 4.3 1.65 − 4.3 1.65 − 4.3 −405C to +855C Min Typ Max 111 Unit pC 0.007 % −0.06 −67 −100 dB dB dB CAPACITANCE (Typical: T = 25°C; VCC = 3.0 V, RL = 50 W, CL = 5 pF, f = 1 MHz) Symbol CIN Pins A−B IN, C−D IN Parameter Control Input CON COFF NCx to COMx NCx NOx Through Switch Unselected Port Test Conditions VIN = 0V VIS = 3.0V, VIN = 3.0V VCC (V) 0V 3.0 V 3.0 V −405C to +855C Min Typ Max 5.0 Unit pF 20 pF 10 pF http://onsemi.com 5 5 Page

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