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Numéro de référence | IPN60R2K1CE | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Infineon | ||
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1 Page
IPN60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss@400V
Body diode di/dt
650
2.1
6.7
5.9
0.76
500
V
Ω
nC
A
µJ
A/µs
Type/OrderingCode
IPN60R2K1CE
Package
PG-SOT223
Marking
60S2K1
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-04-29
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Pages | Pages 13 | ||
Télécharger | [ IPN60R2K1CE ] |
No | Description détaillée | Fabricant |
IPN60R2K1CE | MOSFET ( Transistor ) | Infineon |
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