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PDF IPD80R1K0CE Data sheet ( Hoja de datos )
| Número de pieza | IPD80R1K0CE | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor
IPx80R1K0CE
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
1 page  
800VCoolMOS™CEPowerTransistor
IPD80R1K0CE,IPU80R1K0CE
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Ciss
Coss
Effective output capacitance, energy
related 1)
Co(er)
Effective output capacitance, time related Co(tr)
2)
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
800
2.1
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.9
- 10
50 -
- 100
0.8 0.95
2.2 -
1.2 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.25mA
µA
VDS=800V,VGS=0V,Tj=25°C
VDS=800V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=3.6A,Tj=25°C
VGS=10V,ID=3.6A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
785 -
33 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
26 -
pF VGS=0V,VDS=0...480V
- 69 - pF ID=constant,VGS=0V,VDS=0...480V
-
25 -
ns
VDD=400V,VGS=0/10V,ID=5.7A,
RG=15Ω
-
15 -
ns
VDD=400V,VGS=0/10V,ID=5.7A,
RG=15Ω
-
72 -
ns
VDD=400V,VGS=0/10V,ID=5.7A,
RG=15Ω
-
8-
ns
VDD=400V,VGS=10V,ID=5.7A,
RG=15Ω
Min.
-
-
-
-
Values
Typ. Max.
4-
15 -
31 -
5.5 -
Unit Note/TestCondition
nC VDD=640V,ID=5.7A,VGS=0to10V
nC VDD=640V,ID=5.7A,VGS=0to10V
nC VDD=640V,ID=5.7A,VGS=0to10V
V VDD=640V,ID=5.7A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
Final Data Sheet
5 Rev.2.1,2013-07-18
5 Page 
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
800VCoolMOS™CEPowerTransistor
IPD80R1K0CE,IPU80R1K0CE
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VD
VDS
ID
VDS
Final Data Sheet
11 Rev.2.1,2013-07-18
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IPD80R1K0CE.PDF ] | |
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