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Numéro de référence | S29PL-J | ||
Description | Page Mode and Simultaneous Read/Write Flash memory device | ||
Fabricant | Cypress Semiconductor | ||
Logo | |||
1 Page
S29PL-J
128-/128-/64-/32-Mbit (8/8/4/2M x 16-Bit)
3V, Flash with Enhanced VersatileIO™
Distinctive Characteristics
Architectural Advantages
128-/128-/64-/32-Mbit Page Mode devices
– Page size of 8 words: Fast page read access from random
locations within the page
Single power supply operation
– Full Voltage range: 2.7 to 3.6 V read, erase, and program
operations for battery-powered applications
Dual Chip Enable inputs (only in PL129J)
– Two CE# inputs control selection of each half of the
memory space
Simultaneous Read/Write Operation
– Data can be continuously read from one bank while
executing erase/program functions in another bank
– Zero latency switching from write to read operations
FlexBank Architecture (PL127J/PL064J/PL032J)
– 4 separate banks, with up to two simultaneous operations
per device
– Bank A:
PL127J -16 Mbit (4 Kw 8 and 32 Kw 31)
PL064J - 8 Mbit (4 Kw 8 and 32 Kw 15)
PL032J - 4 Mbit (4 Kw 8 and 32 Kw 7)
– Bank B:
PL127J - 48 Mbit (32 Kw 96)
PL064J - 24 Mbit (32 Kw 48)
PL032J - 12 Mbit (32 Kw 24)
– Bank C:
PL127J - 48 Mbit (32 Kw 96)
PL064J - 24 Mbit (32 Kw 48)
PL032J - 12 Mbit (32 Kw 24)
– Bank D:
PL127J -16 Mbit (4 Kw 8 and 32 Kw 31)
PL064J - 8 Mbit (4 Kw 8 and 32 Kw 15)
PL032J - 4 Mbit (4 Kw 8 and 32 Kw 7)
FlexBank Architecture (PL129J)
– 4 separate banks, with up to two simultaneous operations
per device
– CE#1 controlled banks:
Bank 1A: PL129J - 16-Mbit (4Kw 8 and 32Kw 31)
Bank 1B: PL129J - 48-Mbit (32Kw 96)
– CE#2 controlled banks:
Bank 2A: PL129J - 48-Mbit (32 Kw 96)
Bank 2B: PL129J - 16-Mbit (4 Kw 8 and 32 Kw 31)
Enhanced VersatileI/O (VIO) Control
– Output voltage generated and input voltages tolerated on
all control inputs and I/Os is determined by the voltage on
the VIO pin
– VIO options at 1.8 V and 3 V I/O for PL127J and PL129J
devices
– 3V VIO for PL064J and PL032J devices
Secured Silicon Sector region
– Up to 128 words accessible through a command sequence
– Up to 64 factory-locked words
– Up to 64 customer-lockable words
Both top and bottom boot blocks in one device
Manufactured on 110-nm process technology
Data Retention: 20 years typical
Cycling Endurance: 1 million cycles per sector typical
Performance Characteristics
High Performance
– Page access times as fast as 20 ns
– Random access times as fast as 55 ns
Power consumption (typical values at 10 MHz)
– 45 mA active read current
– 17 mA program/erase current
– 0.2 A typical standby mode current
Software Features
Software command-set compatible with JEDEC 42.4
standard
– Backward compatible with Am29F, Am29LV, Am29DL, and
AM29PDL families and MBM29QM/RM, MBM29LV,
MBM29DL, MBM29PDL families
CFI (Common Flash Interface) compliant
– Provides device-specific information to the system,
allowing host software to easily reconfigure for different
Flash devices
Erase Suspend / Erase Resume
– Suspends an erase operation to allow read or program
operations in other sectors of same bank
Program Suspend / Program Resume
– Suspends a program operation to allow read operation
from sectors other than the one being programmed
Unlock Bypass Program command
Reduces overall programming time when issuing multiple
program command sequences
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00615 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 10, 2016
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Pages | Pages 30 | ||
Télécharger | [ S29PL-J ] |
No | Description détaillée | Fabricant |
S29PL-J | Page Mode and Simultaneous Read/Write Flash memory device | Cypress Semiconductor |
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