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Número de pieza | D20N10E | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | CHONGQING PINGYANG ELECTRONICS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de D20N10E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! D20N10E
FEATURE
20 Amps, 95Volts N-CHANNEL Power MOSFET
DFN5*6
20A,95V,RDS(ON)MAX=7mΩVGS=10V/5A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
GENERAL DESCRIPTION
The D20N10E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The D20N10E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAS
dv/dt
TJ,TSTG
TCH
TL
D20N10E
95
±20
20
80
20
20
5.5
-55 to +150
150
260
UNIT
V
A
mJ
A
V/ns
℃
℃
℃
Thermal Characteristics
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
2.7
55
38
Units
℃/W
℃/W
W
1 page RATINGAND CHARACTERISTIC CURVES
48
VGS=10V,9V,8V,7V,6V
36
5V
24
4V
12
3V
0
0 4 8 12 16
VDS,Drain-to-Source Voltage(V)
20
100
TJ =150℃
10
TJ =25℃
1
VGS =0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS,Source-Drain Voltage(V)
140
130
120
110
100
80
70
-60 -40 -20 0 25 50 75 100 125 150 175
TJ , Junction Temperature(℃)
12 ID =12A
10
8
6
4
2
0
0
10000
1000
100
10 20 30 40 50 60
Qg ,Total Gate Charge(nC)
Ciss
Coss
Crss
10
1 F= 1MHz
0 8 16 24 32 40 48
VDS,Drain-to-Source Voltage(V)
3
2.5
2
1.5
1 VGS=10V
0.5
0
-75 -50 -25 0 25 50 75 100125 150 175
TJ , Junction Temperature(℃)
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet D20N10E.PDF ] |
Número de pieza | Descripción | Fabricantes |
D20N10E | N-CHANNEL Power MOSFET | CHONGQING PINGYANG ELECTRONICS |
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