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Numéro de référence | HGH25N120A | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | HUASHAN ELECTRONIC | ||
Logo | |||
汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH25N120A
█ Applications
• Induction heating and Microwave oven
• Soft switching applications
█ Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.1V@Vge=15V
• High input impedance
• Field stop trench technology offer superior
conduction and switching performances,
• High speed switching
█ Absolute Maximum Ratings
1―Gate,G
2―Collector,C
3―Emitter,E
Symbol
VCES
VGES
IC
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current(TC = 25℃)
Collector Current(TC = 100℃)
Ratings
1200
±30
50
25
Units
V
V
A
A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current
(TC = 100℃)
15
A
Maximum Power Dissipation(TC =
PD
25℃)
Maximum Power Dissipation(TC =
100℃)
200
80
W
W
TJ
Operating Junction
Temperature
-55~+150 ℃
Tstg Storage Temperature Range -55~+150 ℃
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5
seconds
300
℃
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
█ Thermal Characteristics
Symbol
Parameter
Typ.
RθJC(IGBT) Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max. Units
0.44 ℃/W
2.24 ℃/W
40 ℃/W
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Pages | Pages 6 | ||
Télécharger | [ HGH25N120A ] |
No | Description détaillée | Fabricant |
HGH25N120A | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
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