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HUASHAN ELECTRONIC - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence HFP7N60
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant HUASHAN ELECTRONIC 
Logo HUASHAN ELECTRONIC 





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HFP7N60 fiche technique
Shantou Huashan Electronic Devices Co., Ltd.
HFP7N60
N-Channel Enhancement Mode Field Effect Transistor
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
Features
7A, 600V(See Note), RDS(on) <1.2@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Maximum RatingsTa=25unless otherwise specified)
TO-220
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 7A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 28A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 147W
Derate Above 25------------------------------------------------------------------------- 1.18W/
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 420mJ
IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 7A
EAR —— Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 14.7mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------5.5V/ns
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 0.85
Max 62.5
Unit
/W
/W

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