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Numéro de référence | HFP70N03V | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | HUASHAN ELECTRONIC | ||
Logo | |||
Shantou Huashan Electronic Devices Co.,Ltd.
HFP70N03V
N-Channel Enhancement Mode Field Effect Transistor
█ Applications
• Portable Equipment.
• LCD Display Inverter.
• DC/DC converters
• Other switching applications.
█ Features
• 50A, 30V(See Note), RDS(on) <6.6mVΩ@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Minimize input capacitance and gate charge
• Equivalent Type:ME70N03
TO-220
1- G 2-D 3-S
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------30V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 50A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 100A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 50W
EAS—— Pulsed Avalanche Energy(L=0.5mH, Rg=25Ω)-------------------------------------------- 115mJ
Rthj-case—— Thermal Resistance Junction-case-----------------------------------------------------5.0℃/W
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Pages | Pages 6 | ||
Télécharger | [ HFP70N03V ] |
No | Description détaillée | Fabricant |
HFP70N03V | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
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