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PDF HFP17N10 Data sheet ( Hoja de datos )
| Número de pieza | HFP17N10 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HFP17N10
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC motor control.
█ Features
• 17A, 100V, RDS(on) <70mΩ@VGS = 10 V
• High density cell design for ultra low Rdson
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-220
1- G 2- D 3- S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------100V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±20V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 17A
IDM —— Pulsed Drain Current (Note 1) ----------------------------------------------------------------- 60A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 55W
Derate Above 25℃ ------------------------------------------------------------------------- 0.43W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 250mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 17A
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 2.27
Max 62.5
Unit
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFP17N10
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HFP17N10.PDF ] | |
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