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PDF HFH9N90 Data sheet ( Hoja de datos )
| Número de pieza | HFH9N90 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
HFH9N90
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 9A, 900V(See Note), RDS(on) <1.4Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-3P
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------900V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 9A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 36A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 280W
Derate Above 25℃ ------------------------------------------------------------------------- 2.22W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 900mJ
IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 9A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 28mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.0V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-3P
Max 0.45
Max 40
Unit
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFH9N90
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFH9N90.PDF ] | |
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