|
|
PDF HFH12N60 Data sheet ( Hoja de datos )
| Número de pieza | HFH12N60 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HFH12N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Shantou Huashan Electronic Devices Co.,Ltd.
HFH12N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 12A, 600V(See Note), RDS(on) <0.65Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-3P
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 12A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 48A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 300W
Derate Above 25℃ ------------------------------------------------------------------------- 2.38W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 960mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 12A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 30mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.0V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-3P
Max 0.42
Max 40
Unit
℃/W
℃/W
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
█ Typical Characteristics
HFH12N60
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFH12N60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HFH12N60 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |