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PDF BH2223FV Data sheet ( Hoja de datos )
| Número de pieza | BH2223FV | |
| Descripción | D/A Converters | |
| Fabricantes | ROHM Semiconductor | |
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Datasheet
D/A Converters
Standard 8bit 10ch/12ch
BH2223FV BH2221FV
General Description
BH2223FV and BH2221FV are high performance 8bit
R-2R-type D/A converters with 10 and 12 channel
outputs, respectively.
A built-in RESET function ensures that the output
voltage at all channels is LOW during power up and a
broad power supply voltage range (2.7V - 5.5V)
provides design flexibility.
Features
■ Built-in RESET function
■ High speed output response characteristics
■ 3-line serial interface
Applications
DVCs, DSCs, DVDs, CD-Rs, CD-RWs
Key Specifications
VCC Power Source Voltage Range: 2.7V to 5.5V
VDD Power Source Voltage Range: 2.7V to VCC
Current Consumption:
BH2223FV:
1.1mA(Typ)
BH2221FV:
1.6mA(Typ)
Differential Non Linearity Error:
±1.0LSB
Integral Non Linearity Error:
±1.5LSB
Output Current Performance:
±1.0mA
Settling Time:
100µs(Min)
Data Transfer Frequency:
10MHz(Max)
Action Temperature Range:
-20°C to +85°C
Packages
W(Typ) x D(Typ) x H(Max)
SSOP-B16
5.00mm x 6.40mm x 1.35mm
SSOP-B20
6.50mm x 6.40mm x 1.45mm
Lineup
Number of channels
10ch
12ch
Input method
CMOS
Data latch method
LD method
Package
SSOP-B16 Reel of 2500
SSOP-B20 Reel of 2500
Orderable Part Number
BH2223FV-E2
BH2221FV-E2
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/15
TSZ02201-0M2M0GZ15060-1-2
06.Nov.2015 Rev.001
1 page  
BH2223FV BH2221FV
Typical Performance Curves
1.8
1.6
1.4
1.2
25°C
1.0
85°C
0.8
-20°C
0.6
0.4
0.2
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
SUPPSuLpYplVy OVoLltTagAeG: EVC:VC C[VC] [V]
Figure 4. Circuit Current vs Supply Voltage
(VCC Active Current Consumption)
0.9
0.8
0.7 85°C
0.6
25°C
0.5 -20°C
0.4
0.3
0.2
0.1
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
SUPSPupLpYlyVVOoltLaTgeAG: VED:DV[CV]C[V]
Figure 5. Circuit Current vs Supply Voltage
(VDD Active Current Consumption)
3000
2500
VCC or VDD=3.0V
2000
1500
1000
500
0
0 64 128 192
INPInUpTut CCoOdDe [Ede[cd]ec]
Figure 6. Output Voltage vs Input Code
0.4
VCC or VDD=3.0V
0.3
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
0
64 128 192
INPInUpTutCCOodDeE[d[edce] c]
256
Figure 7. Differential Non Linearity Error vs Input Code
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/15
TSZ02201-0M2M0GZ15060-1-2
06.Nov.2015 Rev.001
5 Page 
BH2223FV BH2221FV
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin A
Pin B
C
B
E
Pin B
P+
NN
Parasitic
Elements
P P+
NN
P Substrate
GND
Parasitic
Elements
N P+
N P N P+ N
P Substrate
Parasitic
GND GND
Elements
Figure 17. Example of monolithic IC structure
B
N Region
close-by
C
E
Parasitic
Elements
GND
13. Reset Function
The power on reset circuit, which initializes internal settings, may malfunction during abrupt power ons.
Therefore, set the time constant so as to satisfy the power source rise time.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/15
TSZ02201-0M2M0GZ15060-1-2
06.Nov.2015 Rev.001
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet BH2223FV.PDF ] | |
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