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BD8306MUV fiches techniques PDF

ROHM Semiconductor - Integrated 2.0A MOSFET 1ch Buck-Boost Converter

Numéro de référence BD8306MUV
Description Integrated 2.0A MOSFET 1ch Buck-Boost Converter
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BD8306MUV fiche technique
Datasheet
1.8V to 5.5V, Integrated 2.0A MOSFET 1ch
Buck-Boost Converter
BD8306MUV
General Description
ROHM’s highly-efficient buck-boost converter
BD8306MUV produces buck-boost output voltage
including 3.3 V from two-cell or three-cell alkaline
battery, or one-cell lithium-ion battery with just one
inductor. This IC adopts the original buck-boost drive
system and creates a more efficient power supply than
the conventional SEPIC-system or H-bridge system
switching regulators.
Features
Highly-Efficient Buck-Boost DC/DC Converter
Constructed with just one Inductor.
Maximum output current changes depending on the
input and output voltages. Input current for PVCC
terminal should be less than 2.0A including the DC
current and ripple current of the inductor. Please
refer to Figure 25 and Figure 34 for details about
the maximum output current at 3.3V and 5.0V
output.
Incorporates a Soft-Start Function.
Incorporates a Timer Latch System with Short
Protection Function.
Application
General Portable Equipment
DSC
DVC
Cellular Phone
PDA
LED
Typical Application Circuit
2.8V to 5.5V, Output: 3.3V / 1.0 A, Frequency 1MHz
1100µuFF(c(ecrearmamic)ic)
mmuurartaata
GRM31CB11A106KA01
2.8V2t.o855.5.5VV
12 11
10
RRVVCCCC
0Ω
13
PVCC
14 VCC
Key Specifications
Input Voltage Range:
+1.8V to +5.5V
Output Voltage Range:
+1.8V to +5.2V
Output Current:
(at 3.3V Output, +2.8V to +5.5V Input) 1.0A
(at 5.0V Output, +2.8V to +5.5V Input) 0.7A
Pch FET ON-Resistance:
120m(Typ)
Nch FET ON-Resistance:
100m(Typ)
Standby Current:
0μA (Typ)
Operating Temperature Range:
-40°C to +85°C
Package
W (Typ) x D (Typ) x H (Max)
VQFN016V3030
3.00mm x 3.00mm x 1.00mm
9
8
PGND
LXL2x2 7
44..77uµHH
TOKO DE3518C
ON/OFF
15 STB
RRRRTT
3399kkΩΩ
16 RT
1
2
CCVVCCCC
1FuF
CCFBFB
2222000pFF
RRFBFB4.47.7kkΩΩ
LXL2x2 6
VOUT
5
34
101µ0FuF(c(ceerraammiicc))
mmuruaratata
GRM31CB11A106KA01
3.3V/1.0A
RRINNVV11
565k6ΩkΩ
RRININVV2 2
1100kkΩΩ
CCCC
1120ppFF
RRCC
44..77kkΩΩ
Product structureSilicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
This product has no designed protection against radioactive rays
1/25
TSZ02201-0Q3Q0NZ00340-1-2
10.Aug.2016 Rev.003

PagesPages 29
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