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Datasheet K3816-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
K38 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K3816 | N-Channel MOSFET, 2SK3816 Ordering number : EN8054A
2SK3816
N-Channel Power MOSFET
60V, 40A, 26mΩ, TO-262-3L/TO-263-2L
http://onsemi.com
Features
• ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to  ON Semiconductor data | | |
| 2 | K383 | Silicon N-Channel MOS FET Hitachi mosfet | | |
| 3 | K3831 | N-Channel MOSFET, 2SK3831 Ordering number : ENN8028
2SK3831
N-Channel Silicon MOSFET
2SK3831 General-Purpose Switching Device
Applications
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee.
Specifications
Absolute Maximum Rat  Sanyo Semicon Device data | | |
| 4 | K3842 | N-Channel MOSFET, 2SK3842 2SK3842
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3842
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low le  Toshiba Semiconductor data | | |
| 5 | K385 | N-Channel MOSFET, 2Sk385 ETC data | | |
| 6 | K3850 | N-Channel MOSFET, 2SK3850 Ordering number : ENN8193
2SK3850
www.datasheet4u.com
N-Channel Silicon MOSFET
2SK3850
Features
• • •
General-Purpose Switching Device Applications
Best suited for motor drive. Low ON-resistance. Low Qg.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Volta Sanyo Semicon Device data | | |
| 7 | K3868 | N-Channel MOSFET, 2SK3868
2SK3868
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3868
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 Toshiba Semiconductor data | |
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