DataSheetWiki


HFF5N60 fiches techniques PDF

HUASHAN ELECTRONIC - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence HFF5N60
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant HUASHAN ELECTRONIC 
Logo HUASHAN ELECTRONIC 





1 Page

No Preview Available !





HFF5N60 fiche technique
Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
Features
4.5A, 600V(See Note), RDS(on) <2.5@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type: FQPF5N60C
Maximum RatingsTa=25unless otherwise specified)
TO-220F
1
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150
Tj ——Operating Junction Temperature -------------------------------------------------- 150
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)----------------------------------------------------------- 4.5A
IDM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 18A
PD —— Maximum Power Dissipation (Tc=25℃)-------------------------------------------------------- 33W
Derate Above 25------------------------------------------------------------------------- 0.26W/
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 210mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 4.5A
EAR —— Repetitive Avalanche Energy (Note 1) ------------------------------------------------------- 10mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 3.79
Max 62.5
Unit
/W
/W

PagesPages 6
Télécharger [ HFF5N60 ]


Fiche technique recommandé

No Description détaillée Fabricant
HFF5N60 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HUASHAN ELECTRONIC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche