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PDF BD550B Data sheet ( Hoja de datos )
| Número de pieza | BD550B | |
| Descripción | Silicon NPN Power Transistors | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
275 V
275 V
250 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
2A
150 W
200 ℃
-65~200 ℃
Product Specification
BD550B
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BD550B.PDF ] | |
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