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Inchange Semiconductor - Silicon NPN Power Transistors

Numéro de référence BD550
Description Silicon NPN Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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BD550 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD550
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
130 V
130 V
110 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
2A
150 W
200
-65~200
isc Websitewww.iscsemi.cn

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