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Numéro de référence | BD550 | ||
Description | Silicon NPN Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BD550
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 110V(Min)
APPLICATIONS
·Designed for use as either driver or output unit applications
in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
VCER
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
RBE= 100Ω
Collector-Emitter Voltage
130 V
130 V
110 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
7A
IBB Base Current-Continuous
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
2A
150 W
200 ℃
-65~200 ℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ BD550 ] |
No | Description détaillée | Fabricant |
BD550 | SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS | ETC |
BD550 | Silicon NPN Power Transistors | Inchange Semiconductor |
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BD550B | SILICON TRANSISTOR FOR QUASI - COMPLEMENTARY- SYMMETRY AUDIO AMPLIFIERS | ETC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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