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CHV1206-98F fiches techniques PDF

United Monolithic Semiconductors - Low Phase Noise C band HBT VCO

Numéro de référence CHV1206-98F
Description Low Phase Noise C band HBT VCO
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHV1206-98F fiche technique
CHV1206-98F
Low Phase Noise C band HBT VCO
GaAs Monolithic Microwave IC
Description
The CHV1206-98F is a low phase noise C band
HBT voltage controlled oscillator that integrates
negative resistor, varactors and buffer amplifiers. It
provides an excellent phase noise of 100dBc/Hz at
100kHz offset.
It is designed for a wide range of applications, from
space to commercial communication systems.
The circuit is fully integrated on InGaP HBT
process: 2µm emitter length, via holes through the
substrate and high Q passive elements.
It is available in chip form.
VT
Vc
RF out
Main Features
C-band VCO + C buffers
Fully integrated VCO
(no need for external resonator)
Low phase noise
High frequency stability
On chip self-biased devices
Available in bare die
Chip size: 2.77x2.77mm²
6.6
6.4
6.2
6
5.8
5.6
5.4
5.2
5
0
2468
Vtune (Volts)
10
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
F_out Output frequency range on RF_out port
P_out Output power on RF_out port
PN_100 SSB Phase Noise @ F_out @ 100KHz offset
Min Typ Max Unit
5.35
6.1 GHz
8.5 dBm
100 dBc/Hz
Ref. : DSCHV12066212 -July the 29th, 2016
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com

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