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Numéro de référence | CHK8015-99F | ||
Description | 16W Power Transistor | ||
Fabricant | United Monolithic Semiconductors | ||
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1 Page
CHK8015-99F
16W Power Transistor
GaN HEMT on SiC
Description
The CHK8015-99F is a 16W Gallium Nitride
High Electron Mobility Transistor. This product
offers a general purpose and broadband
solution for a variety of RF power applications.
The circuit is manufactured with a 0.25µm gate
length GaN HEMT technology on SiC
substrate.
It is proposed in a bare die form and requires
an external matching circuitry.
Main Features
■ Wide band capability up to 18GHz
■ Pulsed and CW operating modes
■ GaN technology: High Pout & High PAE
■ DC bias: VD=30V @ID_Q=200mA
■ Chip size 0.88x2x0.1mm
■ RoHS N°2011/65
■ REACh N°1907/2006
Main Electrical Characteristics
Tref = +25°C, CW mode, Freq = 9GHz, VDS = 30V, ID_Q = 200mA
Symbol
Parameter
Min
GSS Small Signal Gain
PSAT
Saturated Output Power
PAE
Max Power Added Efficiency
GPAE_MAX Associated Gain at Max PAE
These values are deduced from elementary power cell performances
Typ
17
20
68
11
Max
Unit
dB
W
%
dB
Ref. : DSCHK80156315 - 10 Nov 16
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
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Pages | Pages 8 | ||
Télécharger | [ CHK8015-99F ] |
No | Description détaillée | Fabricant |
CHK8015-99F | 16W Power Transistor | United Monolithic Semiconductors |
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