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Numéro de référence | CHA6550-QXG | ||
Description | 17.0 - 23.6GHz Power Amplifier | ||
Fabricant | United Monolithic Semiconductors | ||
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1 Page
CHA6550-QXG
17.0- 23.6GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6550-QXG is a three stage
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K band.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length.
36 lead 6x5 mm QFN package
It is supplied in RoHS compliant SMD
package.
Main Features
■ Broadband performances: 17.0- 23.6GHz
■ 34dBm saturated power
■ 41dBm OIP3
■ 22dB gain
■ DC bias: Vd = 6.0Volt @ Id = 1.3A
■ QFN 6x5
UMS■MSL3
36
34
32
30
28
26
24
22
20
Output power & PAE vs frequency
Psat
P1dB
PAE at Psat.
18
16
16 17 18 19 20 21 22 23 24
Frequency (GHz)
25
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
Gain Linear Gain
A3687APsat Saturatedoutputpower
OIP3 Output IP3
Min Typ Max Unit
17.0
23.6 GHz
22 dB
34 dBm
41 dBm
Ref. : DSCHA6550-QXG6159 - 07 Jun 16
1/18 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 - www.ums-gaas.com
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Pages | Pages 18 | ||
Télécharger | [ CHA6550-QXG ] |
No | Description détaillée | Fabricant |
CHA6550-QXG | 17.0 - 23.6GHz Power Amplifier | United Monolithic Semiconductors |
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